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Research on Polishing of Silicon Carbide

wallpapers Industry 2021-01-04
Silicon carbide material has the characteristics of high hardness, high brittleness, and low fracture length, which also makes it easy to cause brittle fracture of the material during the grinding process, leaving a surface fracture layer on the surface of the material, and causing a lot of serious surfaces and subsurface damage. Affect processing accuracy.
 
Research on Polishing of Silicon Carbide
 
At present, the polishing methods of silicon carbide mainly include: mechanical polishing, magnetorheological polishing, chemical mechanical polishing (CMP), electrochemical polishing (ECMP), catalyst assisted polishing or catalytic assisted etching (CACP / CARE), tribochemical polishing (TCP), Also known as non-abrasive polishing) and plasma-assisted polishing (PAP).
 
Chemical mechanical polishing (CMP) technology is currently an important method for semiconductor processing, and it is also the most effective process method that can process the surface of single-crystal silicon to atomic level smoothness. It is the only practical technology that can achieve both localization and localization during processing.
 
By studying the influence of process parameters on the polishing rate of SiC materials, the results show that: the influence of rotation rate and polishing pressure penetrates; the influence of temperature and the pH of the polishing liquid is not significant. In order to increase the polishing rate of the material, the polishing rate should be increased as much as possible. Although increasing the polishing pressure can also increase the removal rate, it is easy to damage the polishing pad.
 
The current silicon carbide polishing method has the problems of low material removal rate, high cost, and no abrasive polishing, catalytic assisted processing and other processing methods. Due to the demanding conditions and complicated device operations, it is still within the scope of the laboratory. , The realization potential of mass production is small.
 
Mankind first discovered silicon carbide in a meteorite in 1905. Now the main crystal is artificially synthesized. Silicon carbide has many uses and has a large industry span. It can be used for monocrystalline silicon, oxides, potassium, quartz crystals, etc., in the solar photovoltaic industry. The semiconductor industry, engineering processing materials for silicon carbide crystal industry.

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