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Advanced materials: Optoelectronic Properties of two dimensional tellurium strain gauge

wallpapers News 2020-09-29

strain engineering usually refers to a kind of semiconductor processing technology which aims to improve the performance of devices by mechanical tensile or compressive strain. Microprocessor manufacturers such as AMD IBM Intel have reported the use of strain engineering in sub 130 nanotechnology. Nowadays as a mature technology strain engineering has been applied to all kinds of electronic devices around us. The ultra-thin strain gauge will not introduce huge mechanical properties due to its huge two-dimensional fracture field. In recent years researchers have explored the influence of mechanical strain on the optical electrical properties of two-dimensional anisotropic materials through precise mechanical manipulation. It has been proved theoretically experimentally that the strain engineering of two-dimensional semiconductor can be used as a rational effective method to manipulate the atomic structure lattice vibration electronic optical properties to improve the performance of industrial devices. As a new two-dimensional semiconductor 2D tellurium (TE) has many special structures such as high carrier mobility high photoelectric activity excellent air stability strong spin orbit interaction chiral induced Weyl node so on. Two dimensional te is composed of anisotropic chiral chain lattice. Each te atom is covalently bonded with two other adjacent te atoms in the same chain the interaction between chains is weaker than covalent bond. The systematic study of the effect of strain engineering on the anisotropy of two-dimensional te will help to deepen the basic understing of this new material design develop more powerful equipment applications.

Professor Wu Wenmao of Purdue University has systematically studied the design introduction of controllable buckling geometry in large area 2D te crystals grown by solution method to obtain anisotropic photoelectric properties. The wavelength of the buckling geometry the amplitude of the bending geometry the local strain are characterized by experiments theoretical studies. Raman spectra reveal the anisotropic lattice vibration of 2D te chiral chain under the corresponding strain conditions. Compared with the [0001] crystal plane the [1210] crystal plane has no covalent bond larger chain spacing (0.35nm) so it can release the stress without changing the bond angle significantly. At the same time the feasibility of applying the buckling 2D Te to the strain sensor with high strain coefficient is further explored. The results show that 2D te is expected to be successfully applied in the design implementation of flexible wearable devices. The experimental platform can also be used to study the stress engineering properties of other two-dimensional materials.

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