1. Material Scientific Research and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms organized in a tetrahedral lattice, mostly in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting phenomenal atomic bond toughness.
The Si– C bond, with a bond power of roughly 318 kJ/mol, is amongst the toughest in structural porcelains, conferring outstanding thermal security, firmness, and resistance to chemical assault.
This robust covalent network leads to a material with a melting factor exceeding 2700 ° C(sublimes), making it among the most refractory non-oxide ceramics offered for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC keeps mechanical strength and creep resistance at temperatures above 1400 ° C, where lots of metals and standard ceramics begin to soften or degrade.
Its reduced coefficient of thermal growth (~ 4.0 × 10 ⁻⁶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) allows fast thermal cycling without catastrophic breaking, a crucial quality for crucible performance.
These innate properties stem from the balanced electronegativity and similar atomic dimensions of silicon and carbon, which advertise a highly secure and densely packed crystal framework.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are usually produced from sintered or reaction-bonded SiC powders, with microstructure playing a decisive duty in toughness and thermal shock resistance.
Sintered SiC crucibles are produced via solid-state or liquid-phase sintering at temperature levels above 2000 ° C, usually with boron or carbon additives to boost densification and grain limit communication.
This process yields a fully thick, fine-grained framework with marginal porosity (
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